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STD12N65M5, STF12N65M5 STP12N65M5, STU12N65M5
N-channel 650 V, 0.370 , 8.5 A MDmeshTM V Power MOSFET DPAK, TO-220FP, TO-220, IPAK
Preliminary Data
Features
Type STD12N65M5 STF12N65M5 STP12N65M5 STU12N65M5 710 V < 0.41 VDSS @ TJmax RDS(on) max ID 8.5 A 8.5 A 8.5 A PW
2 3 1
3 1 2
70 W 70 W 70 W
8.5 A(1) 25 W
IPAK
TO-220
3
1. Limited only by maximum temperature allowed
1
1 2
3
Worldwide best RDS(on) * area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% Avalanche tested
DPAK
TO-220FP
Figure 1.
Internal schematic diagram
Application
Switching applications
Description
MDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the well known company's PowerMESHTM horizontal layout. The resulting product has an extremely low onresistance, unmatched among silicon-based Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies. Table 1. Device summary
Marking 12N65M5 12N65M5 12N65M5 12N65M5 Package DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube Tube Tube Order codes STD12N65M5 STF12N65M5 STP12N65M5 STU12N65M5
February 2009
Rev 2
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
STx12N65M5
Contents
1 2 3 4 5 6 Electrical ratings ........................................... 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STx12N65M5
Electrical ratings
1
Electrical ratings (a)
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220, IPAK, DPAK 650 25 8.5 5.4 34 70 TBD TBD 15 2500 - 55 to 150 150 8.5
(1)
Unit TO-220FP V V A A A W A mJ V/ns V C C
VDS VGS ID ID IDM
(2)
Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Storage temperature Max. operating junction temperature
5.4 (1) 34
(1)
PTOT IAR EAS dv/dt (3) VISO Tstg Tj
25
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 8.5 A, di/dt 400 A/s; VPeak < V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-amb Rthj-pcb Tl
Thermal data
Value Parameter DPAK IPAK TO-220 TO-220FP Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 50 300 C 1.79 100 62.5 5 C/W C/W Unit
a. All data which refers solely to the TO-220FP package is preliminary
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Electrical characteristics
STx12N65M5
2
Electrical characteristics
(TC = 25 C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 650 1 100 100 3 4 0.37 5 0.41 Typ. Max. Unit V A A nA V
VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 20 V
Gate threshold voltage VDS = VGS, ID = 250 A Static drain-source on resistance VGS = 10 V, ID = 4.3 A
Table 5.
Symbol Ciss Coss Crss Co(tr)(1)
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge VDS = 0 to 520 V, VGS = 0 TBD pF Test conditions Min. Typ. 1000 24 3.2 Max. Unit pF pF pF
VDS = 100 V, f = 1 MHz, VGS = 0
TBD
pF
Co(er)(2)
RG Qg Qgs Qgd
f = 1 MHz open drain VDD = 520 V, ID = 4.3 A, VGS = 10 V (see Figure 3)
TBD 19 TBD TBD
nC nC nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
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STx12N65M5
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 400 V, ID = 5 A, RG = 4.7 , VGS = 10 V (see Figure 4) Min. Typ. TBD TBD TBD TBD Max Unit ns ns ns ns
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, VGS = 0 ISD = 8.5 A, di/dt = 100 A/s VDD = 100 V (see Figure 7) ISD = 8.5 A, di/dt = 100 A/s VDD = 100 V, Tj = 150 C (see Figure 7) TBD TBD TBD TBD TBD TBD Test conditions Min. Typ. Max. Unit 8.5 34 1.5 A A V ns nC A ns nC A
VSD (2) trr Qrr IRRM trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
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Test circuits
STx12N65M5
3
Figure 2.
Test circuits
Switching times test circuit for resistive load Figure 3. Gate charge test circuit
VDD 12V
2200
47k 100nF
1k
RL VGS VD RG PW D.U.T.
F
3.3 F
VDD Vi=20V=VGMAX
2200 F
IG=CONST 100 2.7k 47k PW 1k
AM01469v1
D.U.T. VG
AM01468v1
Figure 4.
Test circuit for inductive load Figure 5. switching and diode recovery times
Unclamped inductive load test circuit
A D G S B 25 D.U.T.
A FAST DIODE B
A L=100H B D G 3.3 F 1000 F
L
VD
2200 F
3.3 F
VDD
VDD
ID
RG
S
Vi
D.U.T.
Pw
AM01470v1 AM01471v1
Figure 6.
Unclamped inductive waveform
V(BR)DSS VD
Figure 7.
Switching time waveform
ton tdon tr toff tdoff tf
90% IDM
90% 10%
ID VDD VDD
0
10%
VDS 90%
VGS
AM01472v1
0
10%
AM01473v1
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STx12N65M5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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Package mechanical data
STx12N65M5
TO-251 (IPAK) mechanical data
mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60
0068771_H
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STx12N65M5
Package mechanical data
TO-252 (DPAK) mechanical data
DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Package mechanical data
STx12N65M5
TO-220FP mechanical data mm Dim. Min.
A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2
Typ.
Max.
4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4
L7 E A
B Dia L6 L5 F1 F2 F D
H G1
G
L2 L 3
L4 7012510_Rev_J
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STx12N65M5
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Packaging mechanical data
STx12N65M5
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
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STx12N65M5
Revision history
6
Revision history
Table 8.
Date 24-Feb-2009 27-Feb-2009
Document revision history
Revision 1 2 First release Corrected package information on first page. Changes
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STx12N65M5
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